FDC602P
FDC602P is P-Channel MOSFET manufactured by Fairchild Semiconductor.
Description
This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced Power Trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V
- 12V).
Applications
- Battery management
- Load switch
- Battery protection
Features
- - 5.5 A,
- 20 V RDS(ON) = 35 mΩ @ VGS =
- 4.5 V RDS(ON) = 50 mΩ @ VGS =
- 2.5 V
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
Super SOT TM-6
Absolute Maximum Ratings TA=25o C unless otherwise noted
Symbol
VDSS V GSS ID
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed
(Note 1a)
Maximum Power Dissipation
(Note 1a) (Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
Package Marking and Ordering Information
Device Marking
Device
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