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FDC602P Datasheet P-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDC602P April 2001 FDC602P P-Channel 2.5V PowerTrench® Specified MOSFET.

General Description

This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process.

It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

Applications • Battery management • Load switch • Battery protection

Key Features

  • 5.5 A,.
  • 20 V RDS(ON) = 35 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 50 mΩ @ VGS =.
  • 2.5 V.
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON) S D D SuperSOT TM-6 G D D Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed (Note 1a) PD Maximum Power Dissipation (Note 1a) (Note 1b) TJ,.

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FDC602P Distributor