Datasheet Details
| Part number | FDC602P |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 86.64 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 FDC602P Datasheet
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General Description
This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process.
12V).
Battery management Load switchKey Features
- 5.5 A,.
- 20 V RDS(ON) = 35 mΩ @ VGS =.
- 4.5 V RDS(ON) = 50 mΩ @ VGS =.
- 2.5 V.
- Fast switching speed.
- High performance trench technology for extremely low RDS(ON) S D D SuperSOT TM-6 G D D Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
- Continuous.
- Pulsed (Note 1a) PD Maximum Power Dissipation (Note 1a) (Note 1b) TJ,.