FDC604P Overview
Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications.
Key Features
- 5.5 A, –20 V. RDS(ON) = 33 mΩ @ VGS = –4.5 V RDS(ON) = 43 mΩ @ VGS = –2.5 V RDS(ON) = 60 mΩ @ VGS = –1.8 V
- Fast switching speed
- High performance trench technology for extremely low RDS(ON) S D D SuperSOT TM-6 G D D 1 6 2 5 3
