FDC608PZ Datasheet | Fairchild Semiconductor

June 2006 P-Channel 2.5V Specified Power Trench® MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery power circuits, and DC/DC conversions. tm Features - - 5.8 A, - 20 V. RDS(ON) = 30 mΩ @ VGS = - 4.5 V RDS(ON) = 43 mΩ @ VGS = - 2.5 V - Low Gate Charge - High performance trench technology for extremely low RDS(ON) - Super SOT - 6 package: small footprint (72% smaller than standard SO- 8) low profile (1mm thick). 1 2 6 5 4 Super SOT TM...