FDC608PZ Overview
Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery power circuits, and DC/DC conversions.
Key Features
- 5.8 A, –20 V. RDS(ON) = 30 mΩ @ VGS = –4.5 V RDS(ON) = 43 mΩ @ VGS = –2.5 V
- Low Gate Charge
- High performance trench technology for extremely low RDS(ON)
- SuperSOT TM –6 package: small footprint (72% smaller than standard SO–8) low profile (1mm thick). D D S 1 2 6 5 4 SuperSOT TM -6 D D G
