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FDC608PZ Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDC608PZ June 2006 FDC608PZ P-Channel 2.5V Specified PowerTrench®.

General Description

This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for battery power applications: load switching and power management, battery power circuits, and DC/DC conversions.

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Key Features

  • 5.8 A,.
  • 20 V. RDS(ON) = 30 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 43 mΩ @ VGS =.
  • 2.5 V.
  • Low Gate Charge.
  • High performance trench technology for extremely low RDS(ON).
  • SuperSOT TM.
  • 6 package: small footprint (72% smaller than standard SO.
  • 8) low profile (1mm thick). D D S 1 2 6 5 4 SuperSOT TM -6 D D G www. DataSheet4U. com 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Sour.

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FDC608PZ Distributor