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FDC608PZ - N-Channel MOSFET

General Description

This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • 5.8 A,.
  • 20 V. RDS(ON) = 30 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 43 mΩ @ VGS =.
  • 2.5 V.
  • Low Gate Charge.
  • High performance trench technology for extremely low RDS(ON).
  • SuperSOT TM.
  • 6 package: small footprint (72% smaller than standard SO.
  • 8) low profile (1mm thick). D D S 1 2 6 5 4 SuperSOT TM -6 D D G www. DataSheet4U. com 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Sour.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDC608PZ June 2006 FDC608PZ P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery power circuits, and DC/DC conversions. tm Features • –5.8 A, –20 V. RDS(ON) = 30 mΩ @ VGS = –4.5 V RDS(ON) = 43 mΩ @ VGS = –2.5 V • Low Gate Charge • High performance trench technology for extremely low RDS(ON) • SuperSOT TM –6 package: small footprint (72% smaller than standard SO–8) low profile (1mm thick).