Description
This P
Channel 2.5 V specified MOSFET is produced using
onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on
state resistance and yet maintain low gate charge for superior switching performance.
Features
- 5.8 A,.
- 20 V. RDS(ON) = 30 mW @ VGS =.
- 4.5 V
RDS(ON) = 43 mW @ VGS =.
- 2.5 V.
- Low Gate Charge.
- High Performance Trench Technology for Extremely Low RDS(ON).
- SuperSOT TM.
- 6 Package: Small Footprint (72% Smaller than
Standard SO.
- 8) Low Profile (1 mm Thick).
- These Devices are Pb.
- Free and Halide Free.
FDC608PZ Datasheet
