FDC608PZ Overview
Description
This P-Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery power circuits, and dc-dc conversions.
Key Features
- 5.8 A, –20 V. RDS(ON) = 30 mW @ VGS = –4.5 V RDS(ON) = 43 mW @ VGS = –2.5 V
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(ON)
- SuperSOT TM –6 Package: Small Footprint (72% Smaller than Standard SO–8) Low Profile (1 mm Thick)
- These Devices are Pb-Free and Halide Free
