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FDC608PZ Datasheet P-channel MOSFET

Manufacturer: onsemi

Overview: DATA SHEET .onsemi. MOSFET – P-Channel, POWERTRENCH) 2.5 V Specified FDC608PZ, FDC608PZ-F171 D DS DG D TSOT−23−6 CASE.

General Description

This P−Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for battery power applications: load switching and power management, battery power circuits, and dc−dc conversions.

Key Features

  • 5.8 A,.
  • 20 V. RDS(ON) = 30 mW @ VGS =.
  • 4.5 V RDS(ON) = 43 mW @ VGS =.
  • 2.5 V.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • SuperSOT TM.
  • 6 Package: Small Footprint (72% Smaller than Standard SO.
  • 8) Low Profile (1 mm Thick).
  • These Devices are Pb.
  • Free and Halide Free.

Similar Datasheet

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Fairchild Semiconductor Logo FDC608PZ N-Channel MOSFET Fairchild Semiconductor

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