FDC6020C Datasheet | Fairchild Semiconductor

Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features - - - - - Q1 - 4.2 A, - 20V. RDS(ON) = 55 mΩ @ VGS = - 4.5 V RDS(ON) = 82 mΩ @ VGS = - 2.5 V Q2 5.9 A, 20V. RDS(ON) = 27 mΩ @ VGS = 4.5 V RDS(ON) = 39 mΩ @ VGS = 2.5 V Low gate charge High performance trench technology for extremely low RDS(ON). FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size Applications - - - DC/DC converter Load switch Motor Driving Bottom Drain Contact Q2 (N) 4 5 6 Q1 (P) Bottom Drain Contact 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage TA = 25°C unless otherwise noted Parameter Q1 - 20 (Note 1a) Q2 20 ±12 5.9 20 1.6 1.8 1.2 - 55 to +150 Units - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for single Operation Drain Current ±12 - 4.2 - 20 (Note 1a) (Note 1a) (Note 1b) TJ,...