Description
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Features
- Q1.
- 4.2 A,.
- 20V. RDS(ON) = 55 mΩ @ VGS =.
- 4.5 V RDS(ON) = 82 mΩ @ VGS =.
- 2.5 V Q2 5.9 A, 20V. RDS(ON) = 27 mΩ @ VGS = 4.5 V RDS(ON) = 39 mΩ @ VGS = 2.5 V Low gate charge High performance trench technology for extremely low RDS(ON). FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size.
FDC6020C Datasheet
