FDC6020C - Complementary PowerTrench MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDC6020C
Manufacturer	Fairchild Semiconductor
File Size	211.51 KB
Description	Complementary PowerTrench MOSFET
Datasheet	FDC6020C Datasheet
Additional preview pages of the FDC6020C datasheet.

Product details

Description

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

Q1.
4.2 A,.
20V. RDS(ON) = 55 mΩ @ VGS =.
4.5 V RDS(ON) = 82 mΩ @ VGS =.
2.5 V Q2 5.9 A, 20V. RDS(ON) = 27 mΩ @ VGS = 4.5 V RDS(ON) = 39 mΩ @ VGS = 2.5 V Low gate charge High performance trench technology for extremely low RDS(ON). FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size.

📁 Similar Datasheet

FDC604P - P-Channel MOSFET (ON Semiconductor)
FDC608PZ - P-Channel MOSFET (ON Semiconductor)
FDC608PZ-F171 - P-Channel MOSFET (ON Semiconductor)
FDC6302P - Dual P-Channel MOSFET (ON Semiconductor)
FDC6303N - Dual N-Channel Digital FET (onsemi)
FDC6304P - Dual P-Channel MOSFET (ON Semiconductor)
FDC6305N - Dual N-Channel MOSFET (ON Semiconductor)
FDC6306P - Dual P-Channel 20V MOSFET (VBsemi)

Other Datasheets by Fairchild Semiconductor

FDC602P - P-Channel MOSFET
FDC6000NZ - Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDC6036P - P-Channel 1.8V Specified PowerTrench MOSFET
FDC606P - P-Channel 1.8V Specified PowerTrench MOSFET
FDC610PZ - MOSFET
FDC6301N - Dual N-Channel / Digital FET

Published: Mar 30, 2005 |