Datasheet Summary
MOSFET
- P-Channel, POWERTRENCH)
1.8 V Specified
General Description This P- Channel 1.8 V specified MOSFET uses onsemi’s low voltage POWERTRENCH process. It has been optimized for battery power management applications.
Features
- - 6 A,
- 12 V
- RDS(on) = 26 mW @ VGS =
- 4.5 V
- RDS(on) = 35 mW @ VGS =
- 2.5 V
- RDS(on) = 53 mW @ VGS =
- 1.8 V
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(on)
- This is a Pb- Free and Halide Free Device
Applications
- Battery Management
- Load Switch
- Battery...
