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FDC606P - P-Channel MOSFET

General Description

This P

voltage POWERTRENCH process.

It has been optimized for battery power management applications.

Key Features

  • 6 A,.
  • 12 V.
  • RDS(on) = 26 mW @ VGS =.
  • 4.5 V.
  • RDS(on) = 35 mW @ VGS =.
  • 2.5 V.
  • RDS(on) = 53 mW @ VGS =.
  • 1.8 V.
  • Fast Switching Speed.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • This is a Pb.
  • Free and Halide Free Device.

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Datasheet Details

Part number FDC606P
Manufacturer onsemi
File Size 323.83 KB
Description P-Channel MOSFET
Datasheet download datasheet FDC606P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – P-Channel, POWERTRENCH) 1.8 V Specified FDC606P General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s low voltage POWERTRENCH process. It has been optimized for battery power management applications. Features • −6 A, −12 V ♦ RDS(on) = 26 mW @ VGS = −4.5 V ♦ RDS(on) = 35 mW @ VGS = −2.5 V ♦ RDS(on) = 53 mW @ VGS = −1.8 V • Fast Switching Speed • High Performance Trench Technology for Extremely Low RDS(on) • This is a Pb−Free and Halide Free Device Applications • Battery Management • Load Switch • Battery Protection ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDSS VGSS ID Drain−Source Voltage Gate−Source Voltage Drain Current −Continuous (Note 1a.