| Part Number | FDC606P Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
This P−Channel 1.8 V specified MOSFET uses onsemi’s low
voltage POWERTRENCH process. It has been optimized for battery power management applications.
Features
• −6 A, −12 V
♦ RDS(on) = 26 mW @ VGS = −.
* *6 A, *12 V * RDS(on) = 26 mW @ VGS = *4.5 V * RDS(on) = 35 mW @ VGS = *2.5 V * RDS(on) = 53 mW @ VGS = *1.8 V * Fast Switching Speed * High Performance Trench Technology for Extremely Low RDS(on) * This is a Pb *Free and Halide Free Device Applications * Battery Management * Load Switch * Battery . |
FDC606P Datasheet and Specifications PDF
The FDC606P is a P-Channel MOSFET.
Key Specifications
| Package | SOT-23-6 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 6 |
| Height | 1.1 mm |
| Length | 3 mm |
| Width | 1.7 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | FDC606P Datasheet |
|---|---|
| Description | P-Channel 1.8V Specified PowerTrench MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications.
Features
• –6 A, –12 V. RDS(ON) = 26 mΩ @ VGS =.
* *6 A, *12 V. RDS(ON) = 26 mΩ @ VGS = *4.5 V RDS(ON) = 35 mΩ @ VGS = *2.5 V RDS(ON) = 53 mΩ @ VGS = *1.8 V Applications * Battery management * Load switch * Battery protection * Fast switching speed * High performance trench technology for extremely low RDS(ON) D D S 1 2 G 6 5 4 SuperSOT TM. |