FDC606P Description
This P−Channel 1.8 V specified MOSFET uses onsemi’s low voltage POWERTRENCH process. It has been optimized for battery power management applications.
FDC606P Key Features
- 6 A, -12 V
- RDS(on) = 26 mW @ VGS = -4.5 V
- RDS(on) = 35 mW @ VGS = -2.5 V
- RDS(on) = 53 mW @ VGS = -1.8 V
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(on)
- This is a Pb-Free and Halide Free Device