FDC608PZ - P-Channel MOSFET

ON Semiconductor

FDC608PZ Datasheet Preview — Preview of FDC608PZ PDF

Datasheet Details

Part number	FDC608PZ
Manufacturer	ON Semiconductor ↗
File Size	328.41 KB
Description	P-Channel MOSFET
Datasheet	FDC608PZ-ONSemiconductor.pdf

FDC608PZ Product details

Description

This P Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. dc conversions.

Features

5.8 A,.
20 V. RDS(ON) = 30 mW @ VGS =.
4.5 V RDS(ON) = 43 mW @ VGS =.
2.5 V.
Low Gate Charge.
High Performance Trench Technology for Extremely Low RDS(ON).
SuperSOT TM.
6 Package: Small Footprint (72% Smaller than Standard SO.
8) Low Profile (1 mm Thick).
These Devices are Pb.
Free and Halide Free.

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Published: Mar 22, 2020 |