FDC610PZ Datasheet | onsemi

Features - Max r DS(on) = 42mΩ at VGS = - 10V, ID = - 4.9A - Max r DS(on) = 75mΩ at VGS = - 4.5V, ID = - 3.7A - Low gate charge (17n C typical). - High performance trench technology for extremely low r DS(on). - Super SOTTM - 6 package: small footprint (72% smaller than standard SO- 8) low profile (1mm thick). - Ro HS pliant General Description This P-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion. Application - DC - DC Conversion Pin 1 Super SOTTM -6 D1 D2 G 33 6D 5D 4S MOSFET Maximum Ratings TA= 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) (Note 1b) Ratings - 30 ±25 - 4.9 - 20 1.6 0.8 - 55 to +150 Units V V A W °C RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to...