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FDC610PZ Datasheet - ON Semiconductor

P-Channel MOSFET

FDC610PZ Features

* Max rDS(on) = 42mΩ at VGS =

* 10V, ID =

* 4.9A

* Max rDS(on) = 75mΩ at VGS =

* 4.5V, ID =

* 3.7A

* Low gate charge (17nC typical).

* High performance trench technology for extremely low rDS(on).

* SuperSOTTM

* 6 package: sm

FDC610PZ General Description

This P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switc.

FDC610PZ Datasheet (443.38 KB)

Preview of FDC610PZ PDF

Datasheet Details

Part number:

FDC610PZ

Manufacturer:

ON Semiconductor ↗

File Size:

443.38 KB

Description:

P-channel mosfet.

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FDC610PZ P-Channel MOSFET ON Semiconductor

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