FDC610PZ - P-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDC610PZ
Manufacturer	ON Semiconductor
File Size	443.38 KB
Description	P-Channel MOSFET
Datasheet	FDC610PZ-ONSemiconductor.pdf

FDC610PZ Product details

Description

This P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. DC - DC Conversion S D D Pin 1 G D D SuperSOTTM -6 D1 D2 G 33 6D 5D 4S MOSFET Maximum Ratings T

Features

Max rDS(on) = 42mΩ at VGS =.
10V, ID =.
4.9A.
Max rDS(on) = 75mΩ at VGS =.
4.5V, ID =.
3.7A.
Low gate charge (17nC typical).
High performance trench technology for extremely low rDS(on).
SuperSOTTM.
6 package: small footprint (72% smaller than standard SO.
8) low profile (1mm thick).
RoHS Compliant General.

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Published: Dec 12, 2021 |