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FDC610PZ - P-Channel MOSFET

General Description

August 2007 tm Max rDS(on) = 42mΩ at VGS = 10V, ID = 4.9A Max rDS(on) = 75mΩ at VGS = 4.5V, ID = 3.7A

Low gate charge (17nC typical).

High performance trench technology for extremely low rDS(on).

SuperSOTTM

Key Features

  • General.

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FDC610PZ P-Channel PowerTrench® MOSFET FDC610PZ P-Channel PowerTrench® MOSFET –30V, –4.9A, 42mΩ Features General Description August 2007 tm „ Max rDS(on) = 42mΩ at VGS = –10V, ID = –4.9A „ Max rDS(on) = 75mΩ at VGS = –4.5V, ID = –3.7A „ Low gate charge (17nC typical). „ High performance trench technology for extremely low rDS(on). „ SuperSOTTM –6 package: small footprint (72% smaller than standard SO–8) low profile (1mm thick). „ RoHS Compliant This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.