FDC610PZ Description
August 2007 tm Max rDS(on) = 42mΩ at VGS = 10V, ID = 4.9A Max rDS(on) = 75mΩ at VGS = 4.5V, ID = 3.7A Low gate charge (17nC typical). High performance trench technology for extremely low rDS(on). small footprint (72% smaller than standard SO 8) low profile (1mm thick).
FDC610PZ Key Features
- Max rDS(on) = 42mΩ at VGS = -10V, ID = -4.9A
- Max rDS(on) = 75mΩ at VGS = -4.5V, ID = -3.7A
- Low gate charge (17nC typical)
- High performance trench technology for extremely low rDS(on)
- SuperSOTTM -6 package: small footprint (72% smaller than
- RoHS pliant