Datasheet Summary
FDC610PZ P-Channel PowerTrench® MOSFET
P-Channel PowerTrench® MOSFET
- 30V,
- 4.9A, 42mΩ Features
General Description
August 2007 tm
- Max rDS(on) = 42mΩ at VGS =
- 10V, ID =
- 4.9A
- Max rDS(on) = 75mΩ at VGS =
- 4.5V, ID =
- 3.7A
- Low gate charge (17nC typical).
- High performance trench technology for extremely low rDS(on).
- SuperSOTTM
- 6 package: small footprint (72% smaller than standard SO- 8) low profile (1mm thick).
- RoHS pliant
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These...
