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FDC610PZ Datasheet P-channel MOSFET

Manufacturer: onsemi

Overview: FDC610PZ P-Channel PowerTrench® MOSFET FDC610PZ P-Channel PowerTrench® MOSFET –30V, –4.

General Description

This P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.

Application „ DC - DC Conversion S D D Pin 1 G D D SuperSOTTM -6 D1 D2 G 33 6D 5D 4S MOSFET Maximum Ratings TA= 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) (Note 1b) Ratings –30 ±25 –4.9 –20 1.6 0.8 –55 to +150 Units V V A W °C RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) 78 (Note 1b) 156 °C/W Device Marking .610Z Device FDC610PZ Package SSOT6 Reel Size 7’’ Tape Width 8mm Quantity 3000units ©2007 Semiconductor ponents Industries, LLC.

Key Features

  • Max rDS(on) = 42mΩ at VGS =.
  • 10V, ID =.
  • 4.9A.
  • Max rDS(on) = 75mΩ at VGS =.
  • 4.5V, ID =.
  • 3.7A.
  • Low gate charge (17nC typical).
  • High performance trench technology for extremely low rDS(on).
  • SuperSOTTM.
  • 6 package: small footprint (72% smaller than standard SO.
  • 8) low profile (1mm thick).
  • RoHS Compliant General.

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