* 25 V, 0.22 A Continuous, 0.5 A Peak
* RDS(on) = 5 W @ VGS = 2.7 V
* RDS(on) = 4 W @ VGS = 4.5 V
* Very Low Level Gate Drive Requirements Allowing Direct.

as a replacement for digital transistors. Since bias resistors are not required, these N−Channel FET’s can replace sever.

These dual N−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device.

FDC6302P

FDC6303N

FDC6304P

FDC6305N

FDC6306P

FDC6308P

FDC6310P

FDC6312P

FDC6318P

FDC6320C

FDC6321C

FDC6322C

FDC6323L