FDC6305N - Dual N-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDC6305N
Manufacturer	ON Semiconductor
File Size	327.67 KB
Description	Dual N-Channel MOSFET
Datasheet	FDC6305N Datasheet
Additional preview pages of the FDC6305N datasheet.

Product details

Description

These N Channel low threshold 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on state resistance and yet maintain low gate charge for superior switching performance.

Features

N.
Channel 2.7 A, 20 V RDS(ON) = 0.08 W @ VGS = 4.5 V RDS(ON) = 0.12 W @ VGS = 2.5 V.
Fast Switching Speed.
Low Gate Charge (3.5 nC Typical).
High Performance Trench Technology for Extremely Low RDS(ON).
SUPERSOTt.
6 Package: Small Footprint (72% Smaller than Standard SO.
8); Low Profile (1 mm Thick).
This is a Pb.
Free Device.

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Published: Dec 21, 2023 |