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FDC6305N Datasheet Dual N-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – Dual, N-Channel, POWERTRENCH) 2.5 V Specified FDC6305N General.

General Description

These N−Channel low threshold 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • N.
  • Channel 2.7 A, 20 V RDS(ON) = 0.08 W @ VGS = 4.5 V RDS(ON) = 0.12 W @ VGS = 2.5 V.
  • Fast Switching Speed.
  • Low Gate Charge (3.5 nC Typical).
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • SUPERSOTt.
  • 6 Package: Small Footprint (72% Smaller than Standard SO.
  • 8); Low Profile (1 mm Thick).
  • This is a Pb.
  • Free Device.

FDC6305N Distributor