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FDC6310P Datasheet Dual P-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – Dual, P-Channel, 2.5 V Specified, POWERTRENCH) -20 V, -2.

General Description

These P−Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO−8 and TSSOP−8 packages are impractical.

Key Features

  • 2.2 A,.
  • 20 V.
  • RDS(ON) = 125 mW @ VGS =.
  • 4.5 V.
  • RDS(ON) = 190 mW @ VGS =.
  • 2.5 V.
  • Low Gate Charge.
  • Fast Switching Speed.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • SUPERSOTt.
  • 6 Package: Small Footprint 72% Smaller than Standard SO.
  • 8); Low Profile (1 mm Thick).
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FDC6310P Dual P-Channel 2.5V Specified PowerTrench MOSFET Fairchild Semiconductor

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FDC6310P Distributor