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FDC6310P - Dual P-Channel MOSFET

Description

These P Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on

state resistance and yet maintain low gate charge for superior switching performance.

Features

  • 2.2 A,.
  • 20 V.
  • RDS(ON) = 125 mW @ VGS =.
  • 4.5 V.
  • RDS(ON) = 190 mW @ VGS =.
  • 2.5 V.
  • Low Gate Charge.
  • Fast Switching Speed.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • SUPERSOTt.
  • 6 Package: Small Footprint 72% Smaller than Standard SO.
  • 8); Low Profile (1 mm Thick).
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

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Datasheet preview – FDC6310P

Datasheet Details

Part number FDC6310P
Manufacturer onsemi
File Size 275.33 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet FDC6310P Datasheet
Additional preview pages of the FDC6310P datasheet.

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Full PDF Text Transcription

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MOSFET – Dual, P-Channel, 2.5 V Specified, POWERTRENCH) -20 V, -2.2 A, 125 mW FDC6310P General Description These P−Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO−8 and TSSOP−8 packages are impractical. Features • –2.2 A, –20 V ♦ RDS(ON) = 125 mW @ VGS = –4.5 V ♦ RDS(ON) = 190 mW @ VGS = –2.
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