Description
These N & P
Channel 2.5 V specified MOSFETs are produced
using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on
state resistance and yet maintain low gate charge for superior switching performance.
8 and TSSOP
8 packages are impractical.
Features
- N.
- Channel 2.7 A, 20 V
RDS(ON) = 0.08 W @ VGS = 4.5 V RDS(ON) = 0.12 W @ VGS = 2.5 V.
- P.
- Channel.
- 1.6 A,.
- 20 V
RDS(ON) = 0.17 W @ VGS =.
- 4.5 V RDS(ON) = 0.25 W @ VGS =.
- 2.5 V.
- Fast Switching Speed.
- Low Gate Charge.
- High Performance Trench Technology for Extremely Low RDS(ON).
- SUPERSOTt.
- 6 Package: Small Footprint (72% Smaller than
SO.
- 8); Low Profile (1 mm Thick).
- This is a.
FDC6327C-ONSemiconductor.pdf
