FDC638APZ Datasheet | onsemi

Description This P- Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on- state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion. Features - Max r DS(on) = 43 m W at VGS = - 4.5 V, ID = - 4.5 A - Max r DS(on) = 68 m W at VGS = - 2.5 V, ID = - 3.8 A - Low Gate Charge (8 n C typical) - High Performance Trench Technology for Extremely Low r DS(on) - SUPERSOTt- 6 Package: Small Footprint (72% smaller than Standard SO- 8) Low Profile (1 mm thick) - This Device is Pb- Free, Halide Free and is Ro HS pliant Application - DC- DC Conversion MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Units VDS Drain to Source Voltage VGS Gate to Source Voltage - 20 ±12 Drain Current Continuous (Note 1a) - 4.5 Pulsed - 20 Power Dissipation (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range - 55 to +150...