FDC638P
FDC638P is P-Channel MOSFET manufactured by onsemi.
Description
This P- Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on- state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Features
- - 4.5 A,
- 20 V
- RDS(on) = 48 m W @ VGS =
- 4.5 V
- RDS(on) = 65 m W @ VGS =
- 2.5 V
- Low Gate Charge (10 n C Typical)
- High Performance Trench Technology for Extremely Low RDS(on)
- SUPERSOTt- 6 Package: Small Footprint (72% Smaller than
Standard SO- 8); Low Profile (1 mm Thick)
- This Device is Pb- Free, Halide Free and is Ro HS pliant
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDSS VGSS
Drain- Source Voltage
Gate- Source Voltage
Drain Current
- Continuous (Note 1a)
- Pulsed
- 20
±8
- 4.5
- 20
Power Dissipation for Single Operation
(Note 1a)
(Note...
