* −4.5 A, −20 V
* RDS(on) = 48 mW @ VGS = −4.5 V
* RDS(on) = 65 mW @ VGS = −2.5 V
* Low Gate Charge (10 nC Typical)
* High Performance Trench Technolo.

load switching and power management, battery charging circuits, and DC/DC conversion. Features
* −4.5 A, −20 V
.

This P−Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are.

FDC638APZ

FDC6301N

FDC6302P

FDC6303N

FDC6304P

FDC6305N

FDC6306P

FDC6308P

FDC6310P

FDC6312P

FDC6318P

FDC6320C

FDC6321C