Datasheet Summary
MOSFET
- Dual, N-Channel, POWERTRENCH), Specified
2.5 V
General Description This Dual N- Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
- 3.0 A, 20 V.
RDS(ON) = 70 mW @ VGS = 4.5 V
RDS(ON) = 95 mW @ VGS = 2.5 V
- Low Gate Charge (3.3 nC)
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
- This is a Pb- Free and Halide Free Device
Applications
- DC/DC Converter
- Battery Protection
- Power Management
ABSOLUTE...
