Datasheet4U Logo Datasheet4U.com

FDC6401N - Dual N-Channel 2.5V Specified PowerTrench MOSFET

General Description

This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Key Features

  • 3.0 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V.
  • Low gate charge (3.3 nC).
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDC6401N Dual N-Channel MOSFET ON Semiconductor
FDC640P P-Channel MOSFET ON Semiconductor
FDC6420C Dual-Channel MOSFET ON Semiconductor
FDC642P P-Channel MOSFET ON Semiconductor
FDC642P P-Channel MOSFET Kexin

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDC640P P-Channel MOSFET
FDC6420C 20V N & P-Channel PowerTrench MOSFETs
FDC642P P-Channel MOSFET
FDC642P_F085 P-Channel PowerTrench MOSFET
FDC6432SH 12V P-Channel PowerTrench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDC6401N October 2001 FDC6401N Dual N-Channel 2.5V Specified PowerTrench® MOSFET General Description This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 3.0 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V • Low gate charge (3.