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FDC6401N Datasheet Dual N-channel 2.5v Specified Powertrench MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDC6401N October 2001 FDC6401N Dual N-Channel 2.5V Specified PowerTrench®.

General Description

This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Key Features

  • 3.0 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V.
  • Low gate charge (3.3 nC).
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

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