FDC6401N Datasheet PDF - Fairchild Semiconductor Dual N-Channel 2.5V Specified PowerTrench MOSFET Specs

FDC6401N - Dual N-Channel 2.5V Specified PowerTrench MOSFET

Datasheet Summary

Description

This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Features

3.0 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V.
Low gate charge (3.3 nC).
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.

Datasheet Details

Part number	FDC6401N
Manufacturer	Fairchild Semiconductor
File Size	76.34 KB
Description	Dual N-Channel 2.5V Specified PowerTrench MOSFET
Datasheet	FDC6401N Datasheet
Additional preview pages of the FDC6401N datasheet.

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Full PDF Text Transcription

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FDC6401N October 2001 FDC6401N Dual N-Channel 2.5V Specified PowerTrench® MOSFET General Description This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 3.0 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V • Low gate charge (3.

Published: Mar 30, 2005 |