Datasheet Summary
October 2001
Dual N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
- 3.0 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V
- Low gate charge (3.3 nC)
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
Applications
- DC/DC converter
- Battery Protection
- Power Management
D2 S1 D1
4 5
G2
3 2...
