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FDC640P - P-Channel MOSFET

Datasheet Summary

Description

This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process.

It has been optimized for power management applications for a wide range of gate drive voltages.

Features

  • -4.5 A, -20 V. RDS(ON) = 0.050 Ω @ VGS = -4.5 V RDS(ON) = 0.077 Ω @ VGS = -2.5 V.
  • Rugged gate rating (±12V). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

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Datasheet preview – FDC640P

Datasheet Details

Part number FDC640P
Manufacturer Fairchild Semiconductor
File Size 261.02 KB
Description P-Channel MOSFET
Datasheet download datasheet FDC640P Datasheet
Additional preview pages of the FDC640P datasheet.

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Full PDF Text Transcription

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FDC640P August 2000 FDC640P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages. Features • -4.5 A, -20 V. RDS(ON) = 0.050 Ω @ VGS = -4.5 V RDS(ON) = 0.077 Ω @ VGS = -2.5 V • • • Rugged gate rating (±12V). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
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