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FDC645N - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

DC/DC converter Feat

Features

  • 5.5 A, 30 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 26 mΩ @ VGS = 10 V.
  • High performance trench technology for extremely low RDS(ON).
  • Low gate charge (13 nC typical).
  • High power and current handling capability S D D SuperSOT TM-6 G D D 1 6 2 5 3 4 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed (Note 1a) PD Ma.

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Datasheet preview – FDC645N

Datasheet Details

Part number FDC645N
Manufacturer Fairchild Semiconductor
File Size 100.86 KB
Description N-Channel MOSFET
Datasheet download datasheet FDC645N Datasheet
Additional preview pages of the FDC645N datasheet.

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Full PDF Text Transcription

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FDC645N April 2001 FDC645N N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications • DC/DC converter Features • 5.5 A, 30 V. RDS(ON) = 30 mΩ @ VGS = 4.
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