FDC645N
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Applications
- DC/DC converter
Features
- 5.5 A, 30 V.
RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 26 mΩ @ VGS = 10 V
- High performance trench technology for extremely low RDS(ON)
- Low gate charge (13 n C typical)
- High power and current handling capability
Super SOT TM-6
Absolute Maximum Ratings TA=25o C unless otherwise noted
Symbol
VDSS VGSS ID
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed
(Note 1a)
Maximum Power Dissipation
(Note 1a) (Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a) (Note...
