Datasheet Summary
MOSFET
- N & P-Channel, POWERTRENCH)
20 V
General Description These N & P- Channel MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on- state resistance and yet maintain superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO- 8 and TSSOP- 8 packages are impractical.
Features
- Q1 3.0 A, 20 V
- RDS(on) = 70 mW @ VGS = 4.5 V
- RDS(on) = 95 mW @ VGS = 2.5 V
- Q2
- 2.2 A,
- 20 V
- RDS(on) = 125 mW @ VGS =
- 4.5 V
- RDS(on) = 190 mW @ VGS =
- 2.5 V
- Low Gate Charge
- High Performance Trench Technology for...
