FDC6561AN - Dual N-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDC6561AN
Manufacturer	ON Semiconductor
File Size	271.46 KB
Description	Dual N-Channel MOSFET
Datasheet	FDC6561AN Datasheet
Additional preview pages of the FDC6561AN datasheet.

Product details

Description

These N Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.

Features

2.5 A, 30 V.
RDS(ON) = 0.095 W @ VGS = 10 V.
RDS(ON) = 0.145 W @ VGS = 4.5 V.
Very Fast Switching. Low Gate Charge (2.1 nC Typical).
SUPERSOTt.
6 Package: Small Footprint (72% Smaller than Standard SO.
8); Low Profile (1 mm Thick).
This is a Pb.
Free Device.

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Published: Dec 12, 2021 |