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FDC6561AN - Dual N-Channel MOSFET

Description

These N Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance and yet maintain low gate charge for superior switching performance.

Features

  • 2.5 A, 30 V.
  • RDS(ON) = 0.095 W @ VGS = 10 V.
  • RDS(ON) = 0.145 W @ VGS = 4.5 V.
  • Very Fast Switching. Low Gate Charge (2.1 nC Typical).
  • SUPERSOTt.
  • 6 Package: Small Footprint (72% Smaller than Standard SO.
  • 8); Low Profile (1 mm Thick).
  • This is a Pb.
  • Free Device.

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Datasheet preview – FDC6561AN

Datasheet Details

Part number FDC6561AN
Manufacturer ON Semiconductor
File Size 271.46 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDC6561AN Datasheet
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Full PDF Text Transcription

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DATA SHEET www.onsemi.com MOSFET – Dual, N-Channel, Logic Level, POWERTRENCH) FDC6561AN VDSS 30 V RDS(ON) MAX 0.095 W @ 10 V 0.145 W @ 4.5 V ID MAX 2.5 A General Description These N−Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems. Features • 2.5 A, 30 V ♦ RDS(ON) = 0.095 W @ VGS = 10 V ♦ RDS(ON) = 0.145 W @ VGS = 4.5 V • Very Fast Switching. Low Gate Charge (2.
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