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FDC6561AN Datasheet Dual N-Channel MOSFET

Manufacturer: onsemi

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General Description

These N−Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems.

Overview

DATA SHEET www.onsemi.com MOSFET – Dual, N-Channel, Logic Level, POWERTRENCH) FDC6561AN VDSS 30 V RDS(ON) MAX 0.095 W @ 10 V 0.145 W @ 4.5 V ID MAX 2.

Key Features

  • 2.5 A, 30 V.
  • RDS(ON) = 0.095 W @ VGS = 10 V.
  • RDS(ON) = 0.145 W @ VGS = 4.5 V.
  • Very Fast Switching. Low Gate Charge (2.1 nC Typical).
  • SUPERSOTt.
  • 6 Package: Small Footprint (72% Smaller than Standard SO.
  • 8); Low Profile (1 mm Thick).
  • This is a Pb.
  • Free Device.

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