FDC6561AN Overview
These N−Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems.
FDC6561AN Key Features
- 2.5 A, 30 V
- RDS(ON) = 0.095 W @ VGS = 10 V
- RDS(ON) = 0.145 W @ VGS = 4.5 V
- Very Fast Switching. Low Gate Charge (2.1 nC Typical)
- SUPERSOTt-6 Package: Small Footprint (72% Smaller than
- This is a Pb-Free Device
