• Part: FDD13AN06A0
  • Description: N-Channel MOSFET
  • Manufacturer: onsemi
  • Size: 387.99 KB
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Datasheet Summary

MOSFET - N-Channel, POWERTRENCH) 60 V, 50 A, 13 mW Features - RDS(on) = 11.5 mW (Typ.) @ VGS = 10 V, ID = 50 A - QG(tot) = 22 nC (Typ.) @ VGS = 10 V - Low Miller Charge - Low Qrr Body Diode - UIS Capability (Single Pulse and Repetitive Pulse) - This Device is Pb- Free, Halide Free and is RoHS pliant Applications - Consumer Appliances - LED TV - Synchronous Rectification - Battery Protection Circuit - Motor Drives and Uninterruptible Power Supplies MOSFET MAXIMUM RATINGS (TC = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 80°C, VGS = 10 V) Continuous (TA = 25°C, VGS =...