FDD13AN06A0
FDD13AN06A0 is N-Channel PowerTrench MOSFET manufactured by Fairchild Semiconductor.
- N-Channel Power Trench® MOSFET
November 2013
N-Channel Power Trench® MOSFET
60 V, 50 A, 13 mΩ
Features
- RDS(on) = 11.5 mΩ ( Typ.) @ VGS = 10 V, ID = 50 A
- QG(tot) = 22 n C ( Typ.) @ VGS = 10 V
- Low Miller Charge
- Low Qrr Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
Applications
- Consumer Appliances
- LED TV
- Synchronous Rectification
- Battery Protection Circuit
- Motor Drives and Uninterruptible Power Supplies
Formerly developmental type 82555
D-PAK
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGS
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC < 80o C, VGS = 10V) Continuous (TA = 25o C, VGS = 10V, RθJA = 52o C/W) Pulsed
EAS Single Pulse Avalanche Energy ( Note 1)
Power dissipation Derate above 25o C
TJ, TSTG
Operating and Storage Temperature
FDD13AN06A0 60...
