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FDD13AN06A0 - N-Channel PowerTrench MOSFET

Key Features

  • RDS(on) = 11.5 mΩ ( Typ. ) @ VGS = 10 V, ID = 50 A.
  • QG(tot) = 22 nC ( Typ. ) @ VGS = 10 V.
  • Low Miller Charge.
  • Low Qrr Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).

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FDD13AN06A0 — N-Channel PowerTrench® MOSFET November 2013 FDD13AN06A0 N-Channel PowerTrench® MOSFET 60 V, 50 A, 13 mΩ Features • RDS(on) = 11.5 mΩ ( Typ.) @ VGS = 10 V, ID = 50 A • QG(tot) = 22 nC ( Typ.