FDD13AN06A0
FDD13AN06A0 is N-Channel MOSFET manufactured by onsemi.
MOSFET
- N-Channel, POWERTRENCH)
60 V, 50 A, 13 m W
Features
- RDS(on) = 11.5 m W (Typ.) @ VGS = 10 V, ID = 50 A
- QG(tot) = 22 n C (Typ.) @ VGS = 10 V
- Low Miller Charge
- Low Qrr Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
- This Device is Pb- Free, Halide Free and is Ro HS pliant
Applications
- Consumer Appliances
- LED TV
- Synchronous Rectification
- Battery Protection Circuit
- Motor Drives and Uninterruptible Power Supplies
MOSFET MAXIMUM RATINGS (TC = 25°C, unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDSS VGS ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC < 80°C, VGS = 10 V) Continuous (TA = 25°C, VGS = 10 V,
Rq JA = 52°C/W) Pulsed
±20
A 50 9.9
Figure 4
EAS Single Pulse Avalanche Energy (Note 1) PD Power Dissipation
Derate above...
