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FDD13AN06A0 - N-Channel MOSFET

Key Features

  • RDS(on) = 11.5 mW (Typ. ) @ VGS = 10 V, ID = 50 A.
  • QG(tot) = 22 nC (Typ. ) @ VGS = 10 V.
  • Low Miller Charge.
  • Low Qrr Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

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MOSFET – N-Channel, POWERTRENCH) 60 V, 50 A, 13 mW FDD13AN06A0 Features • RDS(on) = 11.5 mW (Typ.) @ VGS = 10 V, ID = 50 A • QG(tot) = 22 nC (Typ.) @ VGS = 10 V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • This Device is Pb−Free, Halide Free and is RoHS Compliant Applications • Consumer Appliances • LED TV • Synchronous Rectification • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies MOSFET MAXIMUM RATINGS (TC = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 80°C, VGS = 10 V) Continuous (TA = 25°C, VGS = 10 V, RqJA = 52°C/W) Pulsed 60 V ±20 V A 50 9.