FDD2670 - N-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDD2670
Manufacturer	ON Semiconductor
File Size	378.47 KB
Description	N-Channel MOSFET
Datasheet	FDD2670 Datasheet
Additional preview pages of the FDD2670 datasheet.

Product details

Description

This N-Channel MOSFET has been designed specifically to improve t he overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Features

3.6 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V.
Low gate charge.
Fas t switching speed.
High performance trench technology for extremely low RDS(ON).
High power and current handling capability D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
Continuous Drain Current.
Pulsed (Note 1) PD dv/dt Maximum Power Dissipation @ TC = 25°C @.

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Published: Dec 22, 2023 |