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FDD2670 Datasheet 200v N-channel Powertrench MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDD2670 November 2001 FDD2670 200V N-Channel PowerTrench MOSFET General.

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs

Key Features

  • 3.6 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V.
  • Low gate charge.
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current.
  • Continuous.
  • Pulsed TA=25oC unless otherwise noted Parameter Ratings 200 ±20 (Note 1) Units V V A W 3.6.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
ON Semiconductor Logo FDD2670 N-Channel MOSFET ON Semiconductor

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