FDD2670 - 200V N-Channel PowerTrench MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDD2670
Manufacturer	Fairchild Semiconductor
File Size	95.40 KB
Description	200V N-Channel PowerTrench MOSFET
Datasheet	FDD2670 Datasheet
Additional preview pages of the FDD2670 datasheet.

Product details

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

Features

3.6 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V.
Low gate charge.
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
High power and current handling capability D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current.
Continuous.
Pulsed TA=25oC unless otherwise noted Parameter Ratings 200 ±20 (Note 1) Units V V A W 3.6.

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Published: Mar 30, 2005 |