FDD2670 Datasheet | Fairchild Semiconductor

November 2001 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with parable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features - 3.6 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V - Low gate charge - Fast switching speed - High performance trench technology for extremely low RDS(ON) -...