Datasheet Details
| Part number | FDD2670 |
|---|---|
| Manufacturer | onsemi |
| File Size | 378.47 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDD2670 Datasheet
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General Description
This N-Channel MOSFET has been designed specifically to improve t he overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFET's feature faster switching and lower gate charge than other MOSFET's with comparable RDS(ON) specifications.
Key Features
- 3.6 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V.
- Low gate charge.
- Fas t switching speed.
- High performance trench technology for extremely low RDS(ON).
- High power and current handling capability D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
- Continuous Drain Current.
- Pulsed (Note 1) PD dv/dt Maximum Power Dissipation @ TC = 25°C @.