FDD2670 - N-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDD2670
Manufacturer	ON Semiconductor
File Size	378.47 KB
Description	N-Channel MOSFET
Datasheet	FDD2670 Datasheet
Additional preview pages of the FDD2670 datasheet.

Product details

Description

This N-Channel MOSFET has been designed specifically to improve t he overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFET's feature faster switching and lower gate charge than other MOSFET's with comparable RDS(ON) specifications.

Features

3.6 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V.
Low gate charge.
Fas t switching speed.
High performance trench technology for extremely low RDS(ON).
High power and current handling capability D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
Continuous Drain Current.
Pulsed (Note 1) PD dv/dt Maximum Power Dissipation @ TC = 25°C @.

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Published: Dec 22, 2023 |