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  ON Semiconductor Electronic Components Datasheet  

FDD3860 Datasheet

N-Channel PowerTrench MOSFET

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FDD3860
N-Channel PowerTrench® MOSFET
100 V, 29 A, 36 mΩ
Features
„ Max rDS(on) = 36 mΩ at VGS = 10 V, ID = 5.9 A
„ High Performance Trench Technology for Extremely Low
rDS(on)
„ 100% UIL Tested
„ RoHS Compliant
General Description
This N-Channel MOSFET is rugged gate version of ON
Semiconductor‘s advanced Power Trench® process. This part is
tailored for low rDS(on) and low Qg figure of merit, with avalanche
ruggedness for a wide range of switching applications.
Applications
„ DC-AC Conversion
„ Synchronous Rectifier
G
S
D
DT O-P-2A5K2
(T O -25 2)
D
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
29
6.2
60
121
83
3.75
-55 to +175
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.8
40
°C/W
Device Marking
FDD3860
Device
FDD3860
Package
D-PAK (TO-252)
Reel Size
13’’
Tape Width
16 mm
Quantity
2500 units
©2008 Semiconductor Components Industries, LLC.
October-2017, Rev.2
1
Publication Order Number:
FDD3860/D


  ON Semiconductor Electronic Components Datasheet  

FDD3860 Datasheet

N-Channel PowerTrench MOSFET

No Preview Available !

Electrical Characteristics TJ = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
100
V
ID = 250μA, referenced to 25°C
98 mV/°C
VDS = 80V, VGS = 0V
VGS = ±20V, VDS = 0V
1
±100
μA
nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250μA
ID = 250μA, referenced to 25°C
VGS = 10V, ID = 5.9A
VGS = 10V, ID = 5.9A, TJ = 125°C
VDS = 10V, ID = 5.9A
2.5
3.8
-11.4
29
51
20
4.5 V
mV/°C
36
mΩ
64
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 50V, VGS = 0V,
f = 1MHz
f = 1MHz
1310
100
45
1.6
1740
130
70
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 50V, ID = 5.9A,
VGS = 10V, RGEN = 6Ω
VDD = 50V, ID = 5.9A
16 29 ns
10 21 ns
24 39 ns
7 15 ns
22 31 nC
7.1 nC
6.3 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0V, IS = 2.0A
VGS = 0V, IS = 5.9A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 5.9A, di/dt = 100A/μs
0.7 1.2
0.8 1.3
V
34 55 ns
40 64 nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 40°C/W when mounted on a
1 in2 pad of 2 oz copper
b) 96°C/W when mounted
on a minimum pad.
2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 9A, VDD = 100V, VGS = 10V.
www.onsemi.com
2


Part Number FDD3860
Description N-Channel PowerTrench MOSFET
Maker ON Semiconductor
Total Page 6 Pages
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