Datasheet4U Logo Datasheet4U.com

FDD3860 - N-Channel PowerTrench MOSFET

Description

This N-Channel MOSFET is rugged gate version of ON Semiconductor‘s advanced Power Trench® process.

This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications.

DC-AC Conversion Synchronous Rec

Features

  • Max rDS(on) = 36 mΩ at VGS = 10 V, ID = 5.9 A.
  • High Performance Trench Technology for Extremely Low rDS(on).
  • 100% UIL Tested.
  • RoHS Compliant General.

📥 Download Datasheet

Datasheet Details

Part number FDD3860
Manufacturer onsemi
File Size 337.36 KB
Description N-Channel PowerTrench MOSFET
Datasheet download datasheet FDD3860 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDD3860 MOSFET Fairchild Semiconductor
FDD306P MOSFET Fairchild Semiconductor
FDD3510H Dual N&P-Channel MOSFET Fairchild Semiconductor
FDD3570 80V N-Channel PowerTrench MOSFET Fairchild Semiconductor
FDD3580 80V N-Channel PowerTrench MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FDD3510H Dual N & P-Channel Power MOSFET
FDD3670 N-Channel MOSFET
FDD3680 N-Channel MOSFET
FDD3682-F085 N-Channel MOSFET
FDD3690 N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
FDD3860 N-Channel PowerTrench® MOSFET FDD3860 N-Channel PowerTrench® MOSFET 100 V, 29 A, 36 mΩ Features „ Max rDS(on) = 36 mΩ at VGS = 10 V, ID = 5.9 A „ High Performance Trench Technology for Extremely Low rDS(on) „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MOSFET is rugged gate version of ON Semiconductor‘s advanced Power Trench® process. This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications. Applications „ DC-AC Conversion „ Synchronous Rectifier G S D DT O-P-2A5K2 (T O -25 2) D G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted.
Published: |