Datasheet Summary
FDD3860 N-Channel PowerTrench® MOSFET
N-Channel PowerTrench® MOSFET
100 V, 29 A, 36 mΩ
Features
- Max rDS(on) = 36 mΩ at VGS = 10 V, ID = 5.9 A
- High Performance Trench Technology for Extremely Low rDS(on)
- 100% UIL Tested
- RoHS pliant
General Description
This N-Channel MOSFET is rugged gate version of ON Semiconductor‘s advanced Power Trench® process. This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications.
Applications
- DC-AC Conversion
- Synchronous Rectifier
DT O-P-2A5K2 (T O -25 2)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDS VGS
EAS PD TJ,...
