FDD3860
Description
This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process. This part is tailored for low rDS(on) and low Qg.
Key Features
- Max rDS(on) = 36 mΩ at VGS = 10 V, ID = 5.9 A
- High Performance Trench Technology for Extremely Low rDS(on)
- 100% UIL Tested
- RoHS Compliant September 2016
