FDD3860 Datasheet PDF - Fairchild Semiconductor MOSFET Specs

FDD3860 - MOSFET

Datasheet Summary

Description

This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process.

This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications.

DC-AC Conversion Synchron

Features

Max rDS(on) = 36 mΩ at VGS = 10 V, ID = 5.9 A.
High Performance Trench Technology for Extremely Low rDS(on).
100% UIL Tested.
RoHS Compliant September 2016 General.

Datasheet Details

Part number	FDD3860
Manufacturer	Fairchild Semiconductor
File Size	388.40 KB
Description	MOSFET
Datasheet	FDD3860 Datasheet
Additional preview pages of the FDD3860 datasheet.

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Full PDF Text Transcription

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FDD3860 N-Channel PowerTrench® MOSFET FDD3860 N-Channel PowerTrench® MOSFET 100 V, 29 A, 36 mΩ Features Max rDS(on) = 36 mΩ at VGS = 10 V, ID = 5.9 A High Performance Trench Technology for Extremely Low rDS(on) 100% UIL Tested RoHS Compliant September 2016 General Description This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process. This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications. Applications DC-AC Conversion Synchronous Rectifier G S D DT O-P-2A5K2 (T O -25 2) D G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted.

Published: Jan 11, 2017 |