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FDD3860 - N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET is rugged gate version of ON Semiconductor‘s advanced Power Trench® process.

This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications.

DC-AC Conversion Synchronous Rec

Key Features

  • Max rDS(on) = 36 mΩ at VGS = 10 V, ID = 5.9 A.
  • High Performance Trench Technology for Extremely Low rDS(on).
  • 100% UIL Tested.
  • RoHS Compliant General.

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Datasheet Details

Part number FDD3860
Manufacturer onsemi
File Size 337.36 KB
Description N-Channel PowerTrench MOSFET
Datasheet download datasheet FDD3860 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD3860 N-Channel PowerTrench® MOSFET FDD3860 N-Channel PowerTrench® MOSFET 100 V, 29 A, 36 mΩ Features „ Max rDS(on) = 36 mΩ at VGS = 10 V, ID = 5.9 A „ High Performance Trench Technology for Extremely Low rDS(on) „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MOSFET is rugged gate version of ON Semiconductor‘s advanced Power Trench® process. This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications. Applications „ DC-AC Conversion „ Synchronous Rectifier G S D DT O-P-2A5K2 (T O -25 2) D G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted.