FDD4243-G datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* Max RDS(on) = 44 mW at VGS = −10 V, ID = −6.7 A
* Max RDS(on) = 64 mW at VGS = −4.5 V, ID = −5.5 A
* High Performance Trench Technology for Extremely Low rD.

Application

Features
* Max RDS(on) = 44 mW at VGS = −10 V, ID = −6.7 A
* Max RDS(on) = 64 mW at VGS = −4.5 V, ID = −5.5 A <.

Description

This P−Channel MOSFET has been produced using onsemi’s proprietary POWERTRENCH technology to deliver low RDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. Features
* Max RDS(on) = 44 mW at VGS = −10.

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