* −15 A, −60 V
* RDS(ON) = 100 mW at VGS = −10 V
* RDS(ON) = 130 mW at VGS = −4.5 V
* Fast Switching Speed
* High Performance Trench Technology for Ex.

Features
* −15 A, −60 V
* RDS(ON) = 100 mW at VGS = −10 V
* RDS(ON) = 130 mW at VGS = −4.5 V
* Fast Swi.

This 60 V P−Channel MOSFET uses onsemi’s high voltage POWERTRENCH process. It has been optimized for power management applications. Features
* −15 A, −60 V
* RDS(ON) = 100 mW at VGS = −10 V
* RDS(ON) = 130 mW at VGS = −4.5 V
* Fast Sw.

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