FDD5680 Overview
Key Specifications
Package: TO-252-3
Mount Type: Surface Mount
Pins: 3
Height: 2.517 mm
Description
This N-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Key Features
- 38 A, 60 V. RDS(on) = 0.021 Ω @ VGS = 10 V RDS(on) = 0.025 Ω @ VGS = 6 V
- Low gate charge (33nC typical)
- Fast switching speed
- High performance trench technology for extremely low RDS(on). D D G G S TO-252
