Description
This N-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
DC/DC converter
Motor drives
Features
- 38 A, 60 V. RDS(on) = 0.021 Ω @ VGS = 10 V
RDS(on) = 0.025 Ω @ VGS = 6 V.
- Low gate charge (33nC typical).
- Fast switching speed.
- High performance trench technology for extremely
low RDS(on). D
D
G
G
S TO-252
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
PD
TJ, Tstg
Parameter
Drain-Source Voltage Gate-Source Voltage Maximun Drain Current - Continuous
(Note 1) (Note 1a)
Maximum Drain Current
- Pulsed
Maximum Power Dis.
FDD5680-ONSemiconductor.pdf
