FDD5680
Overview
This N-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
- 38 A, 60 V. RDS(on) = 0.021 Ω @ VGS = 10 V RDS(on) = 0.025 Ω @ VGS = 6 V.
- Low gate charge (33nC typical).
- Fast switching speed.
- High performance trench technology for extremely low RDS(on). *
- G G S TO-252
