• 30 A, 60 V. RDS(ON) = 0.027Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V. • Low gate charge (23nC typical). • Fast switching speed. • High performance trench technology .

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOS.

FDD5612

FDD5614P

FDD5670

FDD5680

FDD5202P

FDD5353

FDD5810

FDD5810-F085

FDD5810_F085

FDD5N50

FDD5N50F

FDD5N50FTM_WS

FDD5N50NZ