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FDD5690 Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: FDD5690 FDD5690 60V N-Channel PowerTrench® MOSFET General.

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs

Key Features

  • • 30 A, 60 V. RDS(ON) = 0.027Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V. • Low gate charge (23nC typical). • Fast switching speed. • High performance trench technology for extremely low RDS(ON). D D G G S TO-252 Absolute Maximum Ratings TC=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current -Continuous (Note 1) (Note 1a) PD TJ, Tstg Maximum Drain Current -Pulsed Maximum Power Dissipation @ TC = 25oC TA = 25oC TA =.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FDD5690 60V N-Channel PowerTrench MOSFET Fairchild Semiconductor

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