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FDD5690 - 60V N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

Key Features

  • • • • • 30 A, 60 V. RDS(ON) = 0.027Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V. Low gate charge (23nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). D D G S TO-252 Absolute Maximum Ratings Symbol V DSS V GSS ID Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Maximum Drain Current PD -Continuous -Pulsed (Note 1) (Note 1a) (Note 1b) (Note 1) (Note 1a) G S T C =25 C unless otherwise noted o Parameter Ratings 60 ± 20 30 9 100 50 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD5690 June 1999 PRELIMINARY FDD5690 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • • • • 30 A, 60 V. RDS(ON) = 0.027Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V. Low gate charge (23nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON).