FDD5690
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with parable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
30 A, 60 V. RDS(ON) = 0.027Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V. Low gate charge (23n C typical). Fast switching speed. High performance trench technology for extremely low RDS(ON).
TO-252 Absolute Maximum Ratings
Symbol
V DSS V GSS ID Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Maximum Drain Current PD -Continuous -Pulsed
(Note 1) (Note 1a) (Note 1b) (Note 1) (Note 1a)
T C =25 C unless otherwise noted o
Parameter
Ratings
60 ± 20 30 9 100 50 3.2 1.3 -55 to +150
Units
Max...
