Datasheet Details
| Part number | FDD5690 |
|---|---|
| Manufacturer | onsemi |
| File Size | 234.91 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDD5690 Datasheet
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General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
Key Features
- 30 A, 60 V. RDS(ON) = 0.027Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V. Low gate charge (23nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). D D G G S TO-252 Absolute Maximum Ratings TC=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current -Continuous (Note 1) (Note 1a) PD TJ, Tstg Maximum Drain Current -Pulsed Maximum Power Dissipation @ TC = 25oC TA = 25oC TA =.