Datasheet Summary
FDD6N50 / FDU6N50
- N-Channel UniFETTM MOSFET
FDD6N50 / FDU6N50
N-Channel UniFETTM MOSFET
500 V, 6 A, 900 mΩ Features
- RDS(on) = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A
- Low Gate Charge (Typ. 12.8 nC)
- Low Crss (Typ. 9 pF)
- 100% Avalanche Tested
- Improved dv/dt Capability
Applications
- LCD/LED/PDP TV
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
Description
UniFETTM MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter...
