FDD6N50 Datasheet | Fairchild Semiconductor

Features - RDS(on) = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A - Low Gate Charge (Typ. 12.8 n C) - Low Crss (Typ. 9 p F) - 100% Avalanche Tested - Improved dv/dt Capability Applications - LCD/LED/PDP TV - Lighting - Uninterruptible Power Supply - AC-DC Power Supply November 2013 Description Uni FETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D-PAK I-PAK Absolute Maximum Ratings TC = 25o C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG...