FDD6N50
Description
UniFETTM MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.
Key Features
- RDS(on) = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A
- Low Gate Charge (Typ. 12.8 nC)
- Low Crss (Typ. 9 pF)
- 100% Avalanche Tested
- Improved dv/dt Capability
