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  ON Semiconductor Electronic Components Datasheet  

FDD9407-F085 Datasheet

N-Channel MOSFET

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FDD9407-F085
N-Channel Power Trench® MOSFET
40V, 100A, 2.0mΩ
D
Features
„ Typ rDS(on) = 1.6mΩ at VGS = 10V, ID = 80A
„ Typ Qg(tot) = 86nC at VGS = 10V, ID = 80A
„ UIS Capability
„ RoHS Compliant
„ Qualified to AEC Q101
Applications
„ Automotive Engine Control
„ Powertrain Management
„ Solenoid and Motor Drivers
„ Electronic Steering
„ Integrated Starter/alternator
„ Distributed Power Architectures and VRM
„ Primary Switch for 12V Systems
D
G
G
S
DTO-P-2A5K2
(TO-252)
S
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
Parameter
VDSS Drain to Source Voltage
VGS
Gate to Source Voltage
ID
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS
Single Pulse Avalanche Energy
Power Dissipation
PD
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
RθJC
Thermal Resistance Junction to Case
RθJA
Maximum Thermal Resistance Junction to Ambient
TC = 25°C
TC = 25°C
(Note 2)
(Note 3)
Package Marking and Ordering Information
Ratings
40
±20
100
See Figure4
171
227
1.52
-55 to + 175
0.66
52
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Device Marking
Device
FDD9407
FDD9407-F085
Package
D-PAK(TO-252)
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 0.08mH, IAS = 64A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface
presented here is
obfatsheeddoraninmpoiunnst.inRgθoJnCais1giuna2rpaandteoefd2boyzdceospigpnerw. hile
RθJAis
determined
by
the
user's
board
design.
The maximum rating
©2013 Semiconductor Components Industries, LLC.
September-2017, Rev. 3
Publication Order Number:
FDD9407-F085/D


  ON Semiconductor Electronic Components Datasheet  

FDD9407-F085 Datasheet

N-Channel MOSFET

No Preview Available !

Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
Min
BVDSS Drain to Source Breakdown Voltage
IDSS
Drain to Source Leakage Current
IGSS
Gate to Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
40
VDS = 40V, TJ = 25oC
-
VGS = 0V
TJ = 175oC(Note 4)
-
VGS = ±20V
-
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
2.0
ID = 80A,
TJ = 25oC
-
VGS= 10V TJ = 175oC(Note 4) -
Ciss
Coss
Crss
Rg
Qg(ToT)
Qg(th)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
-
VDS = 25V, VGS = 0V,
f = 1MHz
-
-
f = 1MHz
-
VGS = 0 to 10V
VDD = 32V
-
VGS = 0 to 2V
ID = 80A
-
-
-
Typ
-
-
-
-
3.1
1.6
2.64
6390
1580
95
2.3
86
12
30
15
Max Units
-
V
1
μA
1
mA
±100 nA
4.0
V
2
mΩ
3.22 mΩ
-
pF
-
pF
-
pF
-
Ω
112
nC
15.6 nC
-
nC
-
nC
Switching Characteristics
ton
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
-
-
VDD = 20V, ID = 80A,
-
VGS = 10V, RGEN = 6Ω
-
-
-
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
Trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD = 80A, VGS = 0V
-
ISD = 40A, VGS = 0V
-
IF = 80A, dISD/dt = 100A/μs,
-
VDD=32V
-
Notes:
4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
-
120
ns
27
-
ns
48
-
ns
42
-
ns
18
-
ns
-
97
ns
-
1.25
V
-
1.2
V
58
88
ns
83
143
nC
www.onsemi.com
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Part Number FDD9407-F085
Description N-Channel MOSFET
Maker ON Semiconductor
Total Page 3 Pages
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