Datasheet Summary
Integrated N-Channel POWERTRENCH® MOSFET and Schottky Diode
Description The FDFS6N548 bines the exceptional performance of
ON Semiconductor’s PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO- 8 package.
This device is designed specifically as a single package solution for DC to DC converters. It Features a fast switching, low gate charge MOSFET with very low on- state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features
- Max rDS(on) = 23 mW at VGS = 10 V, ID = 7 A
- Max rDS(on) = 30 mW at VGS = 4.5 V, ID = 6 A
- VF < 0.45 V @ 2 A
VF < 0.28 V @ 100 mA
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