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FDFS6N548 Datasheet N-channel MOSFET And Schottky Diode

Manufacturer: onsemi

Overview: FDFS6N548 Integrated N-Channel POWERTRENCH® MOSFET and Schottky.

General Description

The FDFS6N548 combines the exceptional performance of ON Semiconductor’s PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO−8 package.

This device is designed specifically as a single package solution for DC to DC converters.

It

Key Features

  • a fast switching, low gate charge MOSFET with very low on.
  • state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features.
  • Max rDS(on) = 23 mW at VGS = 10 V, ID = 7 A.
  • Max rDS(on) = 30 mW at VGS = 4.5 V, ID = 6 A.
  • VF < 0.45 V @ 2 A VF < 0.28 V @ 100 mA.
  • Schottky and MOSFET Incorporated into Single Power Surface Mount SO.
  • 8 Package.
  • Electrically Independent Schottky and MOS.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FDFS6N548 Integrated N-Channel PowerTrench MOSFET and Schottky Diode Fairchild Semiconductor

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