FDFS6N548 Datasheet | Fairchild Semiconductor

FDFS6N548 Integrated N-Channel Power Trench® MOSFET and Schottky Diode January 2007 30V, 7A, 23mΩ Features Integrated N-Channel Power Trench® MOSFET and Schottky Diode General Description The FDFS6N548 bines the exceptional performance of Fairchild's Power Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It Features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. tm - Max r DS(on) = 23mΩ at VGS = 10V, ID = 7A - Max r DS(on) = 30mΩ at VGS = 4.5V, ID = 6A - VF < 0.45V @ 2A VF < 0.28V @ 100m A - Schottky and MOSFET incorporated into single power surface mount SO-8 package - Electrically independent Schottky and MOSFET pinout for design flexibility - Low Miller Charge Application - DC/DC Conversion .. A 1 A 2 S 3 G 4 8 C 7 C 6 D 5 D SO-8 Pin 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD EAS VRRM IO TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Drain-Source Avalanche Energy Schotty Repetitive Peak Reverse Voltage Schotty Average Forward Current Operating and Storage Junction Temperature Range (Note 1a) (Note 1a) (Note 3) (Note 1a) Ratings 30 ±20 7 30 2 1.6 12 20 2 -55 to +150 Units V V A W m J V A °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case (Note 1a) (Note 1) 78 40 °C/W Package Marking and Ordering Information Device Marking FDFS6N548 Device FDFS6N548 Package SO-8 Reel Size 330mm Tape Width 12mm Quantity 2500 units .fairchildsemi. ©2007 Fairchild Semiconductor Corporation FDFS6N548...