Datasheet Details
| Part number | FDFS6N548 |
|---|---|
| Manufacturer | onsemi |
| File Size | 328.67 KB |
| Description | N-Channel MOSFET and Schottky Diode |
| Datasheet |
 FDFS6N548 Datasheet
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General Description
The FDFS6N548 combines the exceptional performance of
ON Semiconductor’s PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO
8 package.
This device is designed specifically as a single package solution for DC to DC converters.
Key Features
- a fast switching, low gate charge MOSFET with very low on.
- state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features.
- Max rDS(on) = 23 mW at VGS = 10 V, ID = 7 A.
- Max rDS(on) = 30 mW at VGS = 4.5 V, ID = 6 A.
- VF < 0.45 V @ 2 A VF < 0.28 V @ 100 mA.
- Schottky and MOSFET Incorporated into Single Power Surface Mount SO.
- 8 Package.
- Electrically Independent Schottky and MOS.