FDFS6N548
FDFS6N548 is N-Channel MOSFET and Schottky Diode manufactured by onsemi.
Integrated N-Channel POWERTRENCH® MOSFET and Schottky Diode
Description The FDFS6N548 bines the exceptional performance of
ON Semiconductor’s Power Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO- 8 package.
This device is designed specifically as a single package solution for DC to DC converters. It Features a fast switching, low gate charge MOSFET with very low on- state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features
- Max r DS(on) = 23 m W at VGS = 10 V, ID = 7 A
- Max r DS(on) = 30 m W at VGS = 4.5 V, ID = 6 A
- VF < 0.45 V @ 2 A
VF < 0.28 V @ 100 m A
- Schottky and MOSFET Incorporated into Single Power Surface
Mount SO- 8 Package
- Electrically Independent Schottky and MOSFET Pinout for Design
Flexibility
- Low Miller Charge
Application
- DC/DC Conversion
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value Unit
VDS Drain- to- Source Voltage
VGS Gate- to- Source Voltage
±20
Drain Current
Continuous (Note 1a)
Pulsed
Power Dissipation
Dual Operation
Single Operation (Note 1a) 1.6
EAS VRRM
IO TJ,...
