FDFS6N548 - N-Channel MOSFET and Schottky Diode

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDFS6N548
Manufacturer	ON Semiconductor
File Size	328.67 KB
Description	N-Channel MOSFET and Schottky Diode
Datasheet	FDFS6N548 Datasheet
Additional preview pages of the FDFS6N548 datasheet.

FDFS6N548 Product details

Description

The FDFS6N548 combines the exceptional performance of ON Semiconductor’s PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO

8 package.

This device is designed specifically as a single package solution for DC to DC converters.

Features

a fast switching, low gate charge MOSFET with very low on.
state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features.
Max rDS(on) = 23 mW at VGS = 10 V, ID = 7 A.
Max rDS(on) = 30 mW at VGS = 4.5 V, ID = 6 A.
VF < 0.45 V @ 2 A VF < 0.28 V @ 100 mA.
Schottky and MOSFET Incorporated into Single Power Surface Mount SO.
8 Package.
Electrically Independent Schottky and MOS.

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Published: Dec 24, 2023 |