FDFS6N548 Description
The FDFS6N548 bines the exceptional performance of ON Semiconductor’s PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO−8 package. This device is designed specifically as a single package solution for DC to DC converters.
FDFS6N548 Key Features
- Max rDS(on) = 23 mW at VGS = 10 V, ID = 7 A
- Max rDS(on) = 30 mW at VGS = 4.5 V, ID = 6 A
- VF < 0.45 V @ 2 A
- Schottky and MOSFET Incorporated into Single Power Surface
- Electrically Independent Schottky and MOSFET Pinout for Design
- Low Miller Charge
- DC/DC Conversion
- 55 to °C +150
- Rev. 2