FDG313N Datasheet N-Channel Digital FET

Manufacturer: onsemi

Overview: FDG313N FDG313N Digital FET, N-Channel General.

Datasheet Details

This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.

0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V RDS(on) = 0.60 Ω @ VGS = 2.7 V.
Low gate charge (1.64 nC typical).
Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V).
Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
Compact industry standard SC70-6 surface mount package. S D 1 D 2 G pin 1 SC70-6 D D 3 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS.

Brand Logo	Part Number	Description	Manufacturer
	FDG313N	N-Channel Digital FET	Fairchild Semiconductor

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