FDG313N Datasheet Text
FDG313N
July 2000
FDG313N
Digital FET, N-Channel
General Description
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.
Features
- 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V RDS(on) = 0.60 Ω @ VGS = 2.7 V.
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Low gate charge (1.64 nC typical) Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). pact industry standard SC70-6 surface mount package.
Applications
- Load switch
- Battery protection
- Power management
D D
S
1 6
2
5 pin 1
SC70-6
D
D
G
3...
