Description
This N
Channel Logic Level MOSFET is produced using
ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize on
state resistance and yet maintain superior switching performance.
Features
- 2 A, 30 V.
- RDS(ON) = 0.12 W @ VGS = 10 V.
- RDS(ON) = 0.16 W @ VGS = 4.5 V.
- Low Gate Charge (2.1 nC Typical).
- High Performance Trench Technology for Extremely Low RDS(ON).
- Compact Industry Standard SC70.
- 6 Surface Mount Package.
- These Devices are Pb.
- Free and are RoHS Compliant.
FDG315N Datasheet
