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FDG316P - P-Channel MOSFET

General Description

This P Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize on

state resistance and yet maintain superior switching performance.

Key Features

  • 1.6 A,.
  • 30 V.
  • RDS(ON) = 0.19 W @ VGS =.
  • 10 V.
  • RDS(ON) = 0.30 W @ VGS =.
  • 4.5 V.
  • Low Gate Charge (3.5 nC Typical).
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • Compact Industry Standard SC70.
  • 6 Surface Mount Package.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet Details

Part number FDG316P
Manufacturer onsemi
File Size 300.18 KB
Description P-Channel MOSFET
Datasheet download datasheet FDG316P Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET– P-Channel, Logic Level, POWERTRENCH) FDG316P General Description This P−Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in−line power loss and fast switching are required. Features • −1.6 A, −30 V ♦ RDS(ON) = 0.19 W @ VGS = −10 V ♦ RDS(ON) = 0.30 W @ VGS = −4.5 V • Low Gate Charge (3.